Data set for fabrication of conformal two-dimensional TiO2 by atomic layer deposition using tetrakis (dimethylamino) titanium (TDMAT) and H2O precursors
نویسندگان
چکیده
The data and complementary information presented hare are related to the research article of "http://dx.doi.org/10.1016/j.matdes.2017.02.016; Materials and Design 120 (2017) 99-108" [1]. The article provides data and information on the case of atomic layer deposition (ALD) of ultra-thin two-dimensional TiO2 film. The chemical structure of precursors, and the fabrication process were illustrated. The data of spectral ellipsometric measurements and the methods of calculations were presented. Data of root mean square roughness and the average roughness of the ADL TiO2 film are presented. The method of bandgap measurements and the bandgap calculation are also explained in the present data article.
منابع مشابه
Surface chemistry and film growth during TiN atomic layer deposition 4 using TDMAT and NH 3
22 Abstract 23 24 Surface chemistry and film growth were examined during titanium nitride (TiN) atomic layer deposition (ALD) using sequential 25 exposures of tetrakis-dimethylamino titanium (TDMAT) and NH . This ALD system is shown to be far from ideal and illustrates 3 26 many potential problems that may affect ALD processing. These studies were performed using in situ Fourier transform infra...
متن کاملStructure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO...
متن کاملInterface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces
Ta2O5 films were deposited on GaAs(100) surfaces using thermal atomic layer deposition from pentakis dimethyl amino tantalum (PDMAT) and H2O. The interface between the films and native oxide covered GaAs surfaces has been examined using X-ray photoelectron spectroscopy as a function of film thickness and for deposition temperatures ranging from 200 to 350 °C. Gradual removal of the surface arse...
متن کاملAtomic layer deposition of tin oxide films using tetrakis„dimethylamino... tin
The authors present a new method for preparing thin films of SnO2 by atomic layer deposition ALD using alternating exposures to tetrakis dimethylamino tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl4. Tin oxide films were successfully deposited on a variety of substrates using deposition temperatures of 50–300 ...
متن کاملNucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si
HfO2 thin films have been deposited by an atomic layer deposition ALD process using alternating pulses of tetrakis-ethylmethylamino hafnium and H2O precursors at 250 °C. The as-deposited films are mainly amorphous and nearly stoichiometric HfO2 O/Hf ratio 1.9 with low bonded carbon content 3 at. % . A comparison of the nucleation stage of the films on OHand H-terminated Si 100 surfaces has been...
متن کامل